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Proceedings Paper

Optical studies of InAs/In(As,Sb) single quantum well (SQW) and strained-layer superlattice (SLS) LEDs for the mid-infrared (MIR) region
Author(s): Harvey R. Hardaway; Joerg Heber; Peter Moeck; Mark J. Pullin; Tony Stradling; Patrick J.P. Tang; Christopher C. Phillips
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Paper Abstract

We report on electroluminescence and photoluminescence studies of arsenic rich InAs1-xSbx heterostructure LED's for the MIR region. Single-quantum- well LED's have demonstrated 300 K of approximately 24 (mu) W and approximately 50 (mu) W and approximately 8 micrometers , respectively, with corresponding internal quantum efficiencies of 0.8% and 1.6%. We also demonstrate 4.2 micrometers , 300 K emission from strained-layer superlattice (SLS) LED's with AlSb electron confining barriers with output powers > 0.1 mW. In reverse bias, these SLS devices exhibit negative luminescence efficiencies of approximately 14% at 310 K.

Paper Details

Date Published: 14 April 1999
PDF: 10 pages
Proc. SPIE 3621, Light-Emitting Diodes: Research, Manufacturing, and Applications III, (14 April 1999); doi: 10.1117/12.344470
Show Author Affiliations
Harvey R. Hardaway, Imperial College of Science, Technology and Medicine (United Kingdom)
Joerg Heber, Imperial College of Science, Technology and Medicine (United Kingdom)
Peter Moeck, Imperial College of Science, Technology and Medicine (United States)
Mark J. Pullin, Imperial College of Science, Technology and Medicine (United Kingdom)
Tony Stradling, Imperial College of Science, Technology and Medicine (United Kingdom)
Patrick J.P. Tang, Imperial College of Science, Technology and Medicine (United Kingdom)
Christopher C. Phillips, Imperial College (United Kingdom)


Published in SPIE Proceedings Vol. 3621:
Light-Emitting Diodes: Research, Manufacturing, and Applications III
E. Fred Schubert; Ian T. Ferguson; H. Walter Yao, Editor(s)

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