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Proceedings Paper

Growth of InGaAlP HB-LEDs in a large-scale-production reactor
Author(s): Sherman Li; D. A. Collins; S. Vatanapradit; M. Ferreira; Peter A. Zawadzki; Richard A. Stall; Ivan Eliashevich; J. E. Nering
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Paper Abstract

The theory, structure, and current manufacturing technologies for InGaAlP high brightness light emitting diodes (HB-LED) emitting in the range of 650 to 585 nm are described in this paper. A state-of-the-art HB-LED MOCVD reactor designed for high volume manufacturing (42 - 2' or 16 - 3' wafers) is demonstrated. Data for thickness and compositional uniformity and reproducibility are presented showing the material quality and reactor stability that can currently be achieved. In addition, device data for InGaAlP HB-LEDs is reported, including brightness, forward voltage, and emission wavelength with excellent intra and inter wafer uniformity and run-to-run reproducibility.

Paper Details

Date Published: 14 April 1999
PDF: 8 pages
Proc. SPIE 3621, Light-Emitting Diodes: Research, Manufacturing, and Applications III, (14 April 1999); doi: 10.1117/12.344469
Show Author Affiliations
Sherman Li, Emcore Corp. (United States)
D. A. Collins, Emcore Corp. (United States)
S. Vatanapradit, Emcore Corp. (United States)
M. Ferreira, Emcore Corp. (United States)
Peter A. Zawadzki, Emcore Corp. (United States)
Richard A. Stall, Emcore Corp. (United States)
Ivan Eliashevich, Emcore Corp. (United States)
J. E. Nering, Emcore Corp. (United States)

Published in SPIE Proceedings Vol. 3621:
Light-Emitting Diodes: Research, Manufacturing, and Applications III
E. Fred Schubert; Ian T. Ferguson; H. Walter Yao, Editor(s)

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