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Proceedings Paper

Dependence of the HfO2 thin film structure on the momentum transfer in ion-beam-assisted deposition
Author(s): Salvatore Scaglione; Francesca Sarto; Antonella Rizzo; Marco Alvisi
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Paper Abstract

Evaporated Afnia thin film suffer of high porosity that causes the variation of the optical parameters when the film is exposed to the atmosphere. The ion beam assisted deposition is a useful method to obtain dense and adherent thin film. In this work, the effect of the (Xe) low energy ion beam assistance on the optical properties of HfO2 thin film is investigated. The deposition parameters are expressed in terms of momentum transfer per arrival atoms. Dense films were obtained increasing the P value. The Sigmund's model was applied to describe the collision cascade mechanism and to calculate the threshold energy at which no sputtering occurs. The experimental measurements of sputtering yield were compared with the calculated values. Assisting the growing film by Xi ions at energy lower than the energy threshold, a high value of refractive index has been obtained, as well as for the sample assisted at high P values.

Paper Details

Date Published: 7 April 1999
PDF: 8 pages
Proc. SPIE 3578, Laser-Induced Damage in Optical Materials: 1998, (7 April 1999); doi: 10.1117/12.344450
Show Author Affiliations
Salvatore Scaglione, ENEA (Italy)
Francesca Sarto, ENEA (Italy)
Antonella Rizzo, PASTIS-CNRSM (Italy)
Marco Alvisi, PASTIS-CNRSM (Italy)


Published in SPIE Proceedings Vol. 3578:
Laser-Induced Damage in Optical Materials: 1998
Gregory J. Exarhos; Arthur H. Guenther; Mark R. Kozlowski; Keith L. Lewis; M. J. Soileau, Editor(s)

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