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Proceedings Paper

Rutherford backscattering spectroscopy analysis of Au/Cr/GaAs
Author(s): D. Pantelica; F. Negoita; Rodica V. Ghita; D. Cengher; S. Lazanu
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Paper Abstract

The thermal stability for rapid thermal annealing of Cr/GaAs, Au/GaAs and Au/Cr/GaAs system was investigated using Rutherford backscattering spectroscopy technique. No interdiffusion could be detected in Cr/GaAs and Au/Cr/GaAs systems for low temperature (400°C) rapid thermal annealing. In the Au/GaAs system, Au diffusion and Ga outdiffusion to the surface was observed and a quantitative analysis of the transport of Au in GaAs using RUMP code was performed. A value of D = 1. 1012 cm2/sec was obtained for the diffusion coefficient of Au in GaAs at 400°C. This analysis is related to an attempt of improving the metallization procedure for laser diodes with the active region close to the surface. keywords: rapid thermal annealing, Rutherford backscattering spectroscopy, diffusion, RUMP code.

Paper Details

Date Published: 7 April 1999
PDF: 7 pages
Proc. SPIE 3578, Laser-Induced Damage in Optical Materials: 1998, (7 April 1999); doi: 10.1117/12.344446
Show Author Affiliations
D. Pantelica, National Institute for Physics and Nuclear Engineering (Romania)
F. Negoita, National Institute for Physics and Nuclear Engineering (Romania)
Rodica V. Ghita, National Institute for Materials Physics (Romania)
D. Cengher, National Institute for Materials Physics (Romania)
S. Lazanu, National Institute for Materials Physics (Romania)


Published in SPIE Proceedings Vol. 3578:
Laser-Induced Damage in Optical Materials: 1998
Gregory J. Exarhos; Arthur H. Guenther; Mark R. Kozlowski; Keith L. Lewis; M. J. Soileau, Editor(s)

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