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Proceedings Paper

Contribution to the failure analysis of AlGaAs/GaAs laser diodes
Author(s): Rodica V. Ghita; D. Cengher; S. Lazanu; Valerica Cimpoca
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Paper Abstract

High power laser diodes are of interest due to their potential use in medicine and military applications. This paper presents a systematic study of rapid degradation on our AlGaAs/GaAs large optical cavity devices. The increase of normalized threshold current vs. time was experimentally studied. An evaluation for normalized threshold current vs. absorption coefficient for different reflectivities is presented. For the optical output vs. time curve an abnormal increase of light characteristics was experimentally observed. The variation of the optical power was correlated to material parameters during operation and this behavior has been proposed as a practical criterion to select devices that are on their route to rapid degradation. The output optical power vs. electron fluence curve was measured for irradiated devices and a dislocation climb motion was assumed.

Paper Details

Date Published: 7 April 1999
PDF: 11 pages
Proc. SPIE 3578, Laser-Induced Damage in Optical Materials: 1998, (7 April 1999); doi: 10.1117/12.344435
Show Author Affiliations
Rodica V. Ghita, National Institute for Materials Physics (Romania)
D. Cengher, National Institute for Materials Physics (Romania)
S. Lazanu, National Institute for Materials Physics (Romania)
Valerica Cimpoca, National Institute for Materials Physics (Romania)

Published in SPIE Proceedings Vol. 3578:
Laser-Induced Damage in Optical Materials: 1998
Gregory J. Exarhos; Arthur H. Guenther; Mark R. Kozlowski; Keith L. Lewis; M. J. Soileau, Editor(s)

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