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Proceedings Paper

Laser damage threshold and optical absorption of KDP crystal dependent on their growth conditions
Author(s): Igor M. Pritula; Viacheslav M. Puzikov; Vitaly I. Salo; Marina I. Kolybayeva; Serge V. Garnov; Vladimir L. Voznyi
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Paper Abstract

The effect of different crystallization parameters on optical absorption and laser damage threshold of KDP crystals was studied in the present paper. Crystals were grown in the direction of the prespecified angle of synchronism. A significant influence of the solution acidity, supersaturation value, hydrodynamic growth regime on the absorption spectra and bulk laser damage threshold of crystal was established. It was shown that crystals grown at pH equals 2,4 had an impurity - striated structure, the latter resulting in the decrease of bulk laser damage threshold and optical transparency of crystals. An essential improvement of optical transparency and increase of bulk laser damage threshold in crystals grown at pH equals 5 was found. For the first time established was the actually reached level of laser radiation resistance of rapidly grown oriented KDP crystals, grown at a rate of 5-10 mm/day. The obtained mean value of optical break through threshold is about 3 GW/cm2. This value is comparable with that typical for KDP crystals grown by a conventional method at a rate of 1 mm/day.

Paper Details

Date Published: 7 April 1999
PDF: 8 pages
Proc. SPIE 3578, Laser-Induced Damage in Optical Materials: 1998, (7 April 1999); doi: 10.1117/12.344376
Show Author Affiliations
Igor M. Pritula, Institute for Single Crystals (Ukraine)
Viacheslav M. Puzikov, Institute for Single Crystals (Ukraine)
Vitaly I. Salo, Institute for Single Crystals (Ukraine)
Marina I. Kolybayeva, Institute for Single Crystals (Ukraine)
Serge V. Garnov, General Physics Institute (Russia)
Vladimir L. Voznyi, Institute of Physics (Ukraine)


Published in SPIE Proceedings Vol. 3578:
Laser-Induced Damage in Optical Materials: 1998
Gregory J. Exarhos; Arthur H. Guenther; Mark R. Kozlowski; Keith L. Lewis; M. J. Soileau, Editor(s)

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