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Proceedings Paper

Structural quality of the interface seed crystal in rapidly grown KDP crystals for high-power lasers
Author(s): Vitaly I. Salo; V. F. Tkachenko; Marina I. Kolybayeva
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Paper Abstract

Structural quality of the interface 'seed crystal' of rapid grown KDP crystals was studied by the X-ray diffraction method with high resolution. The presence of a transitional zone seed - crystal more than 12 mm in width, with an increased concentration of defects and nonmonotone variation of the crystal lattice parameter was found. Found and determines was the turn angle between two growth sectors which makes approximately 32 arcs. It was shown that formation of defects at growing the crystal in the directions and produces a significant effect on structural quality of the crystal grown in the direction. The main growth defects of structure were found to be impurity striation a low angle quasi-boundaries caused by the mechanisms of layer-by-layer growth of crystals.

Paper Details

Date Published: 7 April 1999
PDF: 10 pages
Proc. SPIE 3578, Laser-Induced Damage in Optical Materials: 1998, (7 April 1999); doi: 10.1117/12.344375
Show Author Affiliations
Vitaly I. Salo, Institute for Single Crystals (Ukraine)
V. F. Tkachenko, Institute for Single Crystals (Ukraine)
Marina I. Kolybayeva, Institute for Single Crystals (Ukraine)

Published in SPIE Proceedings Vol. 3578:
Laser-Induced Damage in Optical Materials: 1998
Gregory J. Exarhos; Arthur H. Guenther; Mark R. Kozlowski; Keith L. Lewis; M. J. Soileau, Editor(s)

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