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Proceedings Paper

Modeled and measured scatter from vias
Author(s): John C. Stover; Craig A. Scheer; Vladimir I. Ivakhnenko; Yuri A. Eremin; Natalia Grishina
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Paper Abstract

This paper briefly reviews the use of a verified model to investigate light scatter metrology to detect the presence of defects in semiconductor circuit vias. Three types of defects are examined. Although defects can be detected, there are practical problems associated with separating defects from acceptable changes in dielectric film thickness.

Paper Details

Date Published: 29 March 1999
PDF: 7 pages
Proc. SPIE 3619, Surface Characterization for Computer Disks, Wafers, and Flat Panel Displays, (29 March 1999); doi: 10.1117/12.343713
Show Author Affiliations
John C. Stover, ADE Optical Systems (United States)
Craig A. Scheer, ADE Optical Systems (United States)
Vladimir I. Ivakhnenko, ADE Optical Systems (United States)
Yuri A. Eremin, Moscow State Univ. (Russia)
Natalia Grishina, Moscow State Univ. (Russia)


Published in SPIE Proceedings Vol. 3619:
Surface Characterization for Computer Disks, Wafers, and Flat Panel Displays
John C. Stover, Editor(s)

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