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Proceedings Paper

Cross-linking thin film characterization technique for data storage, semiconductor, and flat panel display devices
Author(s): Iris Bloomer; Dale A. Harrison; Shiva Prakash; Kai Zhang; Sean Lian
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Paper Abstract

In manufacturing devices used in the data storage, semiconductor, and flat panel display industries, thin layers of materials are deposited on a particular substrate. These films may consist of semiconductors, dielectrics, polymers, dyes, (photoresist, resin, etc.), color filters, and metal films. In addition to silicon, substrates may consist of glass, quartz, poly-carbonate, or PET. In order to optimize the performance of these devices, an effective thin film characterization method is needed that can measure these thin film structures. We will present a technique that determines, thickness, spectra of n and k from 190 to 900 nm, Eg, and interface roughness of the 'film/substrate' combinations used in the aforementioned industries. This technique is based on wide-band spectrophotometry, combined with spectral analysis incorporating the Forouhi-Bloomer dispersion equations for n and k. The technique offers an excellent signal to noise ratio even in the deep UV wavelength range (below 350 nm) and takes 1 second for the entire measurement.

Paper Details

Date Published: 29 March 1999
PDF: 16 pages
Proc. SPIE 3619, Surface Characterization for Computer Disks, Wafers, and Flat Panel Displays, (29 March 1999); doi: 10.1117/12.343702
Show Author Affiliations
Iris Bloomer, n&k Technology, Inc. (United States)
Dale A. Harrison, n&k Technology, Inc. (United States)
Shiva Prakash, DAS Devices (United States)
Kai Zhang, EG&G Amorphous Silicon (United States)
Sean Lian, Motorola (United States)


Published in SPIE Proceedings Vol. 3619:
Surface Characterization for Computer Disks, Wafers, and Flat Panel Displays
John C. Stover, Editor(s)

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