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Proceedings Paper

Te-doped GaAs crystals used for passive Q-switching of Nd:YAG laser resonators
Author(s): Zygmunt Mierczyk; Krzysztof Kopczynski
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Paper Abstract

Results of investigations of Te doped GaAs, semiconductor nonlinear absorber, used for passive Q-switching of Nd:YAG laser resonators have been presented. The transmission changes dependence of the examined absorber on power density of the passing diagnostic radiation have been determined. There were estimated the following parameters: non-active losses, absorption cross-section, saturation energy, concentration of active centers, relaxation time, and energy losses caused by absorber bleaching. Generation characteristics of diode pumped YAG:Nd3+ laser with GaAs:Te modulator have been investigated. Generation of a train of pulses with duration of 6.5 ns, frequency of 6.7 kHz and energy 9 (mu) J has been obtained. Q-switched pulses showed intensity and timing jitter depending on the positions of intracavity elements.

Paper Details

Date Published: 24 March 1999
PDF: 5 pages
Proc. SPIE 3724, International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications, (24 March 1999); doi: 10.1117/12.343019
Show Author Affiliations
Zygmunt Mierczyk, Military Univ. of Technology (Poland)
Krzysztof Kopczynski, Military Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 3724:
International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications
Andrzej Majchrowski; Jerzy Zielinski, Editor(s)

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