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Proceedings Paper

YAG:V3+single crystal growth and their selected properties
Author(s): Zygmunt Frukacz; Zygmunt Mierczyk; Dorota A. Pawlak
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Paper Abstract

In this work we present results on YAG:V3+ single crystal growth and examination for the purposes of Q- switching of laser resonator in the near IR band. A number of YAG single crystals doped with different concentrations of V3+ ions were obtained by the Czochralski method. The absorption and emission spectra measurements on those crystals are presented. After crystal growth only a small part of vanadium atoms is introduced into a crystal structure as V3+ ions in tetrahedral positions, the other ones are at different positions or at higher charge states V4+ and V5+. Receiving of vanadium ions of V3+ valency in the desired points of YAG structure can be possible as a result of complex reactions in solid- state phase. Such reactions proceed during the process of a multi-stage crystal annealing in reducing atmosphere and in vacuum.

Paper Details

Date Published: 24 March 1999
PDF: 5 pages
Proc. SPIE 3724, International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications, (24 March 1999); doi: 10.1117/12.343018
Show Author Affiliations
Zygmunt Frukacz, Institute of Electronic Materials Technology (Poland)
Zygmunt Mierczyk, Military Univ. of Technology (Poland)
Dorota A. Pawlak, Institute of Electronic Materials Technology and Univ. of Warsaw (Poland)


Published in SPIE Proceedings Vol. 3724:
International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications
Andrzej Majchrowski; Jerzy Zielinski, Editor(s)

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