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Proceedings Paper

Growth and optical properties of Nd:YVO4 laser crystals
Author(s): Slawomir Maksymilian Kaczmarek; Tadeusz Lukasiewicz; Waldemar Giersz; Ryszard Jablonski; Jan Karol Jabczynski; Marek Swirkowicz; Zbigniew Galazka; Winicjusz Drozdowski; Miroslaw Kwasny
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Paper Abstract

Growth conditions for Nd:YVO4 crystals and some optical properties are presented. The obtained Nd:YVO4 crystal shows lower content of point defects and consequently, lower susceptibility to ionizing radiation. ESR measurements show the presence of V ions in interstitial sites with another than 5t valency. Obtained by Czochralski method crystals reveal very good optical properties, some of which are better than for Nd:YAG.

Paper Details

Date Published: 24 March 1999
PDF: 5 pages
Proc. SPIE 3724, International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications, (24 March 1999); doi: 10.1117/12.343016
Show Author Affiliations
Slawomir Maksymilian Kaczmarek, Military Univ. of Technology (Poland)
Tadeusz Lukasiewicz, Institute of Electronic Materials Technology and Military Univ. of Technology (Poland)
Waldemar Giersz, Institute of Electronic Materials Technology (Poland)
Ryszard Jablonski, Institute of Electronic Materials Technology (Poland)
Jan Karol Jabczynski, Military Univ. of Technology (Poland)
Marek Swirkowicz, Institute of Electronic Materials Technology (Poland)
Zbigniew Galazka, Institute of Electronic Materials Technology (Poland)
Winicjusz Drozdowski, Nicholas Copernicus Univ. (Poland)
Miroslaw Kwasny, Military Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 3724:
International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications
Andrzej Majchrowski; Jerzy Zielinski, Editor(s)

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