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Proceedings Paper

Hall and photo-Hall effects in n-CuInS2 crystals
Author(s): D. Cybulski; A. Opanowicz
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Paper Abstract

The n-CuInS2 crystals were grown from the In-rich melt of Cu, In, and S compounds using the Bridgman method. The crystals were grown at two different cooling rates (crystals I and II). The crystals I show two types of temperature dependence of the electron mobility related to different temperature ranges ((mu) o approximately T3/2 and (mu) o approximately T3/2) connected with the impurities and phonons scattering of electrons. The electron mobility of the crystals I is independent of the illumination with white light. On the other hand, the crystals II show strong temperature dependence of the electron mobility ((mu) o approximately T5/2), which changes drastically its character ((mu) approximately T3/2) when illuminated with white light.

Paper Details

Date Published: 24 March 1999
PDF: 5 pages
Proc. SPIE 3724, International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications, (24 March 1999); doi: 10.1117/12.343005
Show Author Affiliations
D. Cybulski, Technical Univ. of Lodz (Poland)
A. Opanowicz, Technical Univ. of Lodz (Poland)


Published in SPIE Proceedings Vol. 3724:
International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications

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