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Proceedings Paper

Photoluminescence studies of Czochralski-grown silicon pressure-annealed at <=1000 K
Author(s): Andrzej Misiuk; Hancza B. Surma
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Paper Abstract

The effect of annealing at <EQ 1000 K under enhanced argon pressure, HP, up to 1.6 GPa on photoluminescence, PL, and electrical properties of Cz-Si was investigated. The PL lines, related to presence of thermal donors, TDs, were detected at 2 K at (1.08 - 1.09) eV for the samples with interstitial oxygen concentration, co, in the (8 - 11) X 1017 cm-3 range, treated at 720 K - HP, whereas at 300 K the PL band at about 0.79 eV was observed. The 0.79 eV PL band intensity increased with co but decreased with HP; the treatment at HP - 720 K for 10 h of the samples with before-created TDs also resulted in decreased intensity of the 0.79 eV band PL at 0.9 eV was observed at 2 K for the sample pre-annealed at 1000 K and afterwards pressure-treated at 920 K - 1.6 GPa, whereas at 300 K, this sample indicated the broad Pl peak at 0.86 eV. Presence of `additional' defects in Cz-Si (introduced by hydrogen implantation) caused suppression of PL after annealing at 720 K -105/1.2 X 109 Pa for 10 h, whereas the hydrogen plasma etched samples indicated detectable band-to-band PL at about 1.1 eV. Qualitative explanation of observed effects was proposed.

Paper Details

Date Published: 24 March 1999
PDF: 5 pages
Proc. SPIE 3724, International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications, (24 March 1999); doi: 10.1117/12.342997
Show Author Affiliations
Andrzej Misiuk, Institute of Electron Technology (Poland)
Hancza B. Surma, Institute of Electron Technology and Institute of Electronic Materials Technology (Poland)

Published in SPIE Proceedings Vol. 3724:
International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications
Andrzej Majchrowski; Jerzy Zielinski, Editor(s)

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