Share Email Print
cover

Proceedings Paper

High-temperature solution growth of oxide single crystals
Author(s): Andrzej Majchrowski
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

High temperature solution growth of oxide single crystals has become very useful method in investigations of new classes of materials for opto-electronics. In this paper applicability of this method, its advantages, and disadvantages have been discussed. Investigations of crystallization of several oxides such as mixed sillenites Bi12Ti1-xMxO20 (M equals Pb, Ga, V), double tungstates (K1-xCsxDy(WO4)2 and KGd(WO4)2:Nd), and borates (CsLiB6O10 and YAl3(BO3)4:Nd) carried out by this technique have been described.

Paper Details

Date Published: 24 March 1999
PDF: 4 pages
Proc. SPIE 3724, International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications, (24 March 1999); doi: 10.1117/12.342984
Show Author Affiliations
Andrzej Majchrowski, Military Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 3724:
International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications
Andrzej Majchrowski; Jerzy Zielinski, Editor(s)

© SPIE. Terms of Use
Back to Top