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Proceedings Paper

Estimation of doping limit of some elements in GaSb single crystals
Author(s): Vera Sestakova; Bedrich Stepanek; Jaroslav Sestak
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Paper Abstract

Gallium antimonide (GaSb) crystals were grown by the Czochralski method in a flowing hydrogen atmosphere and doped with various elements. The limit of a doping concentration of each used dopant was measured. It was shown that the lowest solubility was for S, N, Cu and the highest solubility for In, Ge, Te and As. The results are discussed and summarized in the table.

Paper Details

Date Published: 24 March 1999
PDF: 5 pages
Proc. SPIE 3724, International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications, (24 March 1999); doi: 10.1117/12.342976
Show Author Affiliations
Vera Sestakova, Institute of Physics (Czech Republic)
Bedrich Stepanek, Institute of Physics (Czech Republic)
Jaroslav Sestak, Institute of Physics (Czech Republic)


Published in SPIE Proceedings Vol. 3724:
International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications
Andrzej Majchrowski; Jerzy Zielinski, Editor(s)

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