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Proceedings Paper

n-type doping of GaSb crystals in ionized hydrogen atmosphere
Author(s): Bedrich Stepanek; Vera Sestakova; Jaroslav Sestak
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Paper Abstract

GaSb crystals highly doped with tellurium were grown using the Czochralski method without encapsulant in the flowing atmosphere of ionized hydrogen. The inherent free carrier concentration was several times lower than by using the molecular hydrogen. It was shown that the ionized atmosphere served as a passivator in the wider range of tellurium concentration and that the equilibrium between passivated and active donors was created according to the ratio of p- to n-type dopants in the starting melt.

Paper Details

Date Published: 24 March 1999
PDF: 4 pages
Proc. SPIE 3724, International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications, (24 March 1999); doi: 10.1117/12.342975
Show Author Affiliations
Bedrich Stepanek, Institute of Physics (Czech Republic)
Vera Sestakova, Institute of Physics (Czech Republic)
Jaroslav Sestak, Institute of Physics (Czech Republic)


Published in SPIE Proceedings Vol. 3724:
International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications
Andrzej Majchrowski; Jerzy Zielinski, Editor(s)

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