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Proceedings Paper

Influence of In content on electron concentration in CdTe at high temperatures
Author(s): P. Fochuk; O. Korovyanko; O. Panchuk
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Paper Abstract

High effect measurements were carried out in the 500 - 1200 K temperature range under controlled Cd vapor pressure (PCd equals 10-5-3 atm). Samples' saturation by In was performed from the vapor phase at 1073 K under PIn during 24 or 240 hours. The In concentration in the sample was about approximately 1019 and approximately 1020 at/cm3 respectively. Up to 500 K and PmaxCd the electron concentration [e-] in the heavy doped samples is temperature independent, it is characterized by the slope (Delta) E equals 0.4 eV and reaches the maximum value of approximately 3 X 1018 at/cm3. The temperature dependence in the sample, containing approximately 1019 at/cm3 In, has a maximum ]e-] value and then decreases. The results can be described by a defect structure model, supposing, that the dominating defects are In+Cd defects and complex associates of the (In+Cd V2-Cd)- type, but an essential role play V2-Cd and the increase of In solubility with temperature also.

Paper Details

Date Published: 24 March 1999
PDF: 5 pages
Proc. SPIE 3724, International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications, (24 March 1999); doi: 10.1117/12.342974
Show Author Affiliations
P. Fochuk, Univ. of Chernivtsi (Ukraine)
O. Korovyanko, Univ. of Chernivtsi (Ukraine)
O. Panchuk, Univ. of Chernivtsi (Ukraine)


Published in SPIE Proceedings Vol. 3724:
International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications
Andrzej Majchrowski; Jerzy Zielinski, Editor(s)

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