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Proceedings Paper

Single crystals of ZnTe and (Cd,Zn)Te produced by physical vapor transport technique for MBE (substrates) and other applications
Author(s): Andrzej Mycielski; A. Szadkowski; E. Lusakowska; Leszek Kowalczyk; J. Domagala; Jadwiga Bak-Misiuk; B. Witkowska; Krzysztof Adamiec; Jaroslaw Rutkowski; A. Jedrzejczak
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Paper Abstract

The growth of the single crystals of ZnTe and Cd1-xZnxTe (x <EQ 0.25) by a simple, horizontal, low temperature physical vapor transport technique (PVT) is presented as an example of the application of the PVT technique to the technology of MBE substrates: large (1 inch in diameter), twin-free crystals of wide-gap II-VI compounds of very high quality. The advantages of the PVT technique are emphasized. The results of the characterization of the grown crystals are presented.

Paper Details

Date Published: 24 March 1999
PDF: 8 pages
Proc. SPIE 3724, International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications, (24 March 1999); doi: 10.1117/12.342973
Show Author Affiliations
Andrzej Mycielski, Institute of Physics (Poland)
A. Szadkowski, Institute of Physics (Poland)
E. Lusakowska, Institute of Physics (Poland)
Leszek Kowalczyk, Institute of Physics (Poland)
J. Domagala, Institute of Physics (Poland)
Jadwiga Bak-Misiuk, Institute of Physics (Poland)
B. Witkowska, Institute of Physics (Poland)
Krzysztof Adamiec, Military Univ. of Technology (Poland)
Jaroslaw Rutkowski, Military Univ. of Technology (Poland)
A. Jedrzejczak, Institute of Physics (Poland)


Published in SPIE Proceedings Vol. 3724:
International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications
Andrzej Majchrowski; Jerzy Zielinski, Editor(s)

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