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Proceedings Paper

Growth and photoelectrical properties of AgInS2 crystals
Author(s): B. Koscielniak-Mucha; A. Opanowicz
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Paper Abstract

The chalcopyrite n-type AgInS2 crystals have been grown by the Bridgman method from the melt containing stoichiometric quantities of components with 0.2% excess of In or 0.1% excess of S. The steady-state photoconductivity and photoconductivity decay have been measured from T equals 90 to 360 K. At high light intensities the photoconductivity depends sublinearly on excitation strength in a power 0.5. In this excitation strength range the decay of photoconductivity with time curves have `hyperbolic shape' which is typical for the quadratic recombination process.

Paper Details

Date Published: 24 March 1999
PDF: 4 pages
Proc. SPIE 3724, International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications, (24 March 1999); doi: 10.1117/12.342964
Show Author Affiliations
B. Koscielniak-Mucha, Technical Univ. of Lodz (Poland)
A. Opanowicz, Technical Univ. of Lodz (Poland)


Published in SPIE Proceedings Vol. 3724:
International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications
Andrzej Majchrowski; Jerzy Zielinski, Editor(s)

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