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Proceedings Paper

Silicon-on-insulator resonant cavity photodiode without a slow carrier diffusion tail
Author(s): Vasileios S. Sinnis; Myron Seto; Gert W. t'Hooft; Y. Watabe; Alan P. Morrison; Willem Hoekstra; W. B. De Boer
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Paper Abstract

We report on a novel silicon-based resonant cavity photodiode with a buried silicon dioxide layer as the bottom reflector. The buried oxide is created by using a separation by implantation of oxygen technique. The device shows large Fabry-Perot oscillations. Resonant peaks and anti-resonant troughs are observed as a function of the wavelength, with a peak responsivity of about 50 mA/W at 650 nm and 709 nm. The leakage current density is 85 pA/mm2 at -5 V, and the average zero-bias capacitance is 12 pF/mm2. We also demonstrate that the buried oxide prevents carriers generated deep within the substrate from reaching the top contacts, thus removing any slow carrier diffusion tail from the impulse response.

Paper Details

Date Published: 19 March 1999
PDF: 7 pages
Proc. SPIE 3630, Silicon-based Optoelectronics, (19 March 1999); doi: 10.1117/12.342802
Show Author Affiliations
Vasileios S. Sinnis, National Microelectronics Research Ctr. and Philips Research Labs. (Netherlands)
Myron Seto, Philips Research Labs. (Netherlands)
Gert W. t'Hooft, Philips Research Labs. (Netherlands)
Y. Watabe, Philips Industrial Activities (Belgium)
Alan P. Morrison, National Microelectronics Research Ctr. (Ireland)
Willem Hoekstra, Philips Research Labs. (Netherlands)
W. B. De Boer, Philips Research Labs. (Netherlands)

Published in SPIE Proceedings Vol. 3630:
Silicon-based Optoelectronics
Derek C. Houghton; Eugene A. Fitzgerald, Editor(s)

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