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Proceedings Paper

Loss measurements for -SiC-on-insulator waveguides for high-speed silicon-based photonic devices
Author(s): Adrian P. Vonsovici; Graham T. Reed; Alan G. R. Evans; Fereydoon Namavar
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Paper Abstract

In this work planar planar (beta) -SiC-on-insulator waveguides were investigated. The waveguides were fabricated by two different methods. In the first a technological process similar to that of SIMOX was used, and therefore a buried SiO2 layer was formed by high energy ion implantation of oxygen in SiC/Si wafers. For the second type of waveguides we used heteroepitaxy of SiC on SOI(SIMOX). The losses have been measured at 0.633, 1.3 and 1.55 micrometer in both TE and TM polarization. A detailed analysis of the different loss mechanisms is presented. These types of waveguides have potential for high-speed silicon-based photonic devices compatible with silicon technology.

Paper Details

Date Published: 19 March 1999
PDF: 10 pages
Proc. SPIE 3630, Silicon-based Optoelectronics, (19 March 1999); doi: 10.1117/12.342797
Show Author Affiliations
Adrian P. Vonsovici, Univ. of Surrey (United Kingdom)
Graham T. Reed, Univ. of Surrey (United Kingdom)
Alan G. R. Evans, Univ. of Southampton (United Kingdom)
Fereydoon Namavar, Spire Corp. (United States)


Published in SPIE Proceedings Vol. 3630:
Silicon-based Optoelectronics
Derek C. Houghton; Eugene A. Fitzgerald, Editor(s)

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