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Proceedings Paper

Monolithic integration of III-V materials and devices on silicon
Author(s): Steve Ting; Mayank T. Bulsara; Vicky Yang; Mike Groenert; Srikanth Samavedam; Matt Currie; Thomas Langdo; Eugene A. Fitzgerald; Abhay M. Joshi; Rene Brown; Xinde Wang; Robert M. Sieg; Steven A. Ringel
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Paper Abstract

The realization of monolithic optical interconnects by integration of III-V materials with conventional Si circuitry has long been hindered by materials incompatibilities (i.e. lattice mismatch and heterovalent interface) and practical processing constraints. We have demonstrated successful integration of hetero-epitaxially grown InGaAs/Si diodes with an n-well CMOS process on (001) Si offcut 6 degrees towards [110]. The In0.15Ga0.85As/InxGa1- xAs/GaAs/Si diodes were grown by atmospheric pressure organo-metallic chemical vapor deposition (OMCVD) and features a room temperature R0A product of 20,000 ohm-cm2. No degradation of PMOS or NMOS transistor characteristics was detected upon integration of the III-V devices. Further improvement of III-V/Si device characteristics are anticipated in future efforts by incorporating relaxed, compositionally- graded Ge/GexSi1-x/Si with low threading dislocation densities (approximately 2 X 106/cm2) to bridge the gap in lattice constants between Si and GaAs. Recent progress towards this end includes the suppression of antiphase disorder during GaAs growth on Ge/GexSi1-x/Si by OMCVD and strong room temperature photoluminescence from In0.20Ga0.80As QW test structures on GaAs/GexSi1- x/Si at 920 nm.

Paper Details

Date Published: 19 March 1999
PDF: 10 pages
Proc. SPIE 3630, Silicon-based Optoelectronics, (19 March 1999); doi: 10.1117/12.342796
Show Author Affiliations
Steve Ting, Massachusetts Institute of Technology (United States)
Mayank T. Bulsara, Massachusetts Institute of Technology (United States)
Vicky Yang, Massachusetts Institute of Technology (United States)
Mike Groenert, Massachusetts Institute of Technology (United States)
Srikanth Samavedam, Massachusetts Institute of Technology (United States)
Matt Currie, Massachusetts Institute of Technology (United States)
Thomas Langdo, Massachusetts Institute of Technology (United States)
Eugene A. Fitzgerald, Massachusetts Institute of Technology (United States)
Abhay M. Joshi, Discovery Semiconductors Inc. (United States)
Rene Brown, Discovery Semiconductors Inc. (United States)
Xinde Wang, Discovery Semiconductors Inc. (United States)
Robert M. Sieg, The Ohio State Univ. (United States)
Steven A. Ringel, The Ohio State Univ. (United States)


Published in SPIE Proceedings Vol. 3630:
Silicon-based Optoelectronics
Derek C. Houghton; Eugene A. Fitzgerald, Editor(s)

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