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Proceedings Paper

Relaxed GeSi alloy grown on low-temperature buffers by MBE
Author(s): Chang-Si Peng; Qi Huang; Junming Zhou; Yi H. Zhang; C. H. Tung; T. T. Sheng; Jian Wang
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Paper Abstract

We have developed a new MBE growth technique by using low- temperature-Si (LT-Si) or LT-GeSi buffer layers. Even if the Ge fraction up to 90%, the total thickness of fully relaxed GexSi1-x buffers can be reduced to 1.7 micrometer with dislocation density lower than 5 X 106 cm-2. The roughness is no more than 6 nm. According to the analysis of X-ray diffraction, the crystal quality of the top layer is very good, and the strain relaxation is quite inhomogeneous from the beginning of relaxation. By using high resolution cross section TEM, we observed that stacking faults are induced and form the misfit dislocations in the interface of GeSi/LT-Si. We propose that the formation of the stacking faults is due to the aggregation of the large amount of the vacant defects in the LT-Si layer.

Paper Details

Date Published: 19 March 1999
PDF: 6 pages
Proc. SPIE 3630, Silicon-based Optoelectronics, (19 March 1999); doi: 10.1117/12.342795
Show Author Affiliations
Chang-Si Peng, Institute of Physics (China)
Qi Huang, Institute of Physics (China)
Junming Zhou, Institute of Physics (China)
Yi H. Zhang, Institute of Semiconductors (China)
C. H. Tung, Institute of Microelectronics (Singapore)
T. T. Sheng, Institute of Microelectronics (Singapore)
Jian Wang, Institute of Microelectronics (Singapore)


Published in SPIE Proceedings Vol. 3630:
Silicon-based Optoelectronics
Derek C. Houghton; Eugene A. Fitzgerald, Editor(s)

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