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Proceedings Paper

1850 A/W responsivity in optically controlled MOSFET by illumination of 1.5 um wavelength light
Author(s): Yuichi Nitta; Tomonari Yamagata; Yohei Takano; Kazuhiko Shimomura
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Paper Abstract

The gate length dependencies of the optical response characteristics in the optically controlled MOSFET have measured. This device was the integrated structure of absorption region and MOSFET region by using direct wafer bonding technique. By reducing the gate length of MOSFET region, the transconductance of FET channel was increased, and we obtained high current modulation and responsivity by irradiation of 1.5 micrometer wavelength light.

Paper Details

Date Published: 19 March 1999
PDF: 10 pages
Proc. SPIE 3630, Silicon-based Optoelectronics, (19 March 1999); doi: 10.1117/12.342793
Show Author Affiliations
Yuichi Nitta, Sophia Univ. (Japan)
Tomonari Yamagata, Sophia Univ. (Japan)
Yohei Takano, Sophia Univ. (Japan)
Kazuhiko Shimomura, Sophia Univ. (Japan)

Published in SPIE Proceedings Vol. 3630:
Silicon-based Optoelectronics
Derek C. Houghton; Eugene A. Fitzgerald, Editor(s)

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