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Proceedings Paper

Active Y-switch based on an asymmetrical BMFET device
Author(s): Andrea Irace; Giovanni Breglio; Antonello Cutolo
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Paper Abstract

In this paper we propose an optoelectronic Y-switch based on a three terminal active device and on the mode-mixing principle. It consists of a 1400 micron long asymmetrical rib waveguide designed to sustain only the fundamental and the first propagating mode; along this waveguide the difference in effective indices between these modes cumulates to 2(pi) and the light emerges on the same side where it has been injected. In the ON state, the presence of an electron-hole plasma injected and spatially controlled with a Bipolar Mode Field Effect Transistor device (BMFET) forces the fundamental mode and the first propagating mode to be shifted by an additional -(pi) thus allowing the light to emerge from the other side of the waveguide. Numerical simulation of losses, cross-talk and switching speed are presented.

Paper Details

Date Published: 19 March 1999
PDF: 6 pages
Proc. SPIE 3630, Silicon-based Optoelectronics, (19 March 1999); doi: 10.1117/12.342789
Show Author Affiliations
Andrea Irace, Univ. degli Studi di Napoli Federico II (Italy)
Giovanni Breglio, Univ. degli Studi di Napoli Federico II (Italy)
Antonello Cutolo, Univ. degli Studi di Napoli Federico II (Italy)


Published in SPIE Proceedings Vol. 3630:
Silicon-based Optoelectronics
Derek C. Houghton; Eugene A. Fitzgerald, Editor(s)

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