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Proceedings Paper

Strong violet light emission from Ge+-implanted SiO2 layers
Author(s): Lars Rebohle; Ida E. Tyschenko; J. von Borany; Wolfgang Skorupa; H. Froeb
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Paper Abstract

It was shown that Ge+-implanted SiO2 thermally grown on crystalline Si is one of the most promising materials for Si-based light emission. This material exhibits strong violet photo-(PL) and electroluminescence (EL) at room temperature, which is well visible by the naked eye at ambient light. In detail, the PL spectra of Ge-rich layers peaking around 400 nm reach a maximum after annealing at 500 degrees Celsius to 800 degrees Celsius for Ge concentrations in the range of 0.3 to 2 at%. Based on PL excitation (PLE) spectra we tentatively interpret the violet PL as due to the neutral oxygen vacancy typical for Si-rich SiO2 and similar Ge- related defects in Ge+-implanted silicon dioxide. EL and electrical measurements were carried out at MOS capacitors using a transparent ITO and a thick Al front contact, respectively. The I-V-dependence exhibiting the typical behavior of Fowler-Nordheim tunneling shows an increase of the breakdown voltage and the tunneling current for Ge-rich oxide in comparison to the unimplanted material. The EL spectrum of the Ge-implanted oxide correlates very well with the PL one. The EL intensity shows a linear dependence on the injected current over three orders of magnitude. EL efficiencies up to 5 X 10-4 for Ge+-implanted silicon dioxide were found.

Paper Details

Date Published: 19 March 1999
PDF: 8 pages
Proc. SPIE 3630, Silicon-based Optoelectronics, (19 March 1999); doi: 10.1117/12.342785
Show Author Affiliations
Lars Rebohle, Forschungszentrum Rossendorf e.V. (Germany)
Ida E. Tyschenko, Forschungszentrum Rossendorf e.V. and Institute of Semiconductor Physics (Germany)
J. von Borany, Forschungszentrum Rossendorf e.V. (Germany)
Wolfgang Skorupa, Forschungszentrum Rossendorf e.V. (Germany)
H. Froeb, Technische Univ. Dresden (Germany)

Published in SPIE Proceedings Vol. 3630:
Silicon-based Optoelectronics
Derek C. Houghton; Eugene A. Fitzgerald, Editor(s)

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