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Proceedings Paper

Silicon interference filters and Bragg reflectors for active and passive integrated optoelectronic components
Author(s): Selena Chan; Philippe M. Fauchet
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Paper Abstract

Porous silicon (PSi) multilayer structures are used in Si- based optoelectronic devices which exhibit interesting optical and electrical properties. Integration of these structure can be achieved either passively or actively. Passive elements include high reflectivity mirrors and optical filters with a maximum reflectivity peak approximately 100%. The benefit of adding a multilayer mirror below a luminescent PSi film is to reduce the amount of light absorbed by the silicon substrate and increase the light output. Placing two multilayer mirrors in between a highly luminescent PSi film creates an active microcavity resonator structure in which a significant photoluminescence and electroluminescence line narrowing (FWHM less than or equal to 20 nm) is observed. A detailed study on the passive and active roles of PSi multilayer structures is presented in a device configuration.

Paper Details

Date Published: 19 March 1999
PDF: 11 pages
Proc. SPIE 3630, Silicon-based Optoelectronics, (19 March 1999); doi: 10.1117/12.342784
Show Author Affiliations
Selena Chan, Univ. of Rochester (United States)
Philippe M. Fauchet, Univ. of Rochester (United States)

Published in SPIE Proceedings Vol. 3630:
Silicon-based Optoelectronics
Derek C. Houghton; Eugene A. Fitzgerald, Editor(s)

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