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Proceedings Paper

Mid-infrared absorption in self-assembled Ge quantum dots grown on Si substrate
Author(s): Wen-Gang Wu; Jian-Lin Liu; Gaolong Jin; Kang Lung Wang
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Paper Abstract

Mid-infrared absorption in boron-doped and modulation boron- doped self-assembled Ge quantum dots grown on (001) oriented Si substrates is reported for the first time in this paper. The structures, which were grown by a solid source molecular beam epitaxy system, are composed of 20 or 30 periods of Ge dot layers and Si spacer films. The structural properties of the multilayers and some uncapped Ge dots on sample surface were tested by cross-sectional transmission electron and atomic force microscopes, respectively. Through use of Fourier transform infrared and Raman spectrometers, infrared absorption signals peaking in the mid-infrared range were observed. The absorption is strongly polarized along the growth axis of the samples. Experimental and theoretical analysis suggests that the mid-infrared response be attributed to intraband transitions in the valence band of the Ge quantum dots. This study demonstrates the application potential of these kinds of Ge/Si quantum dot multilayer structures for developing mid-infrared photodetectors.

Paper Details

Date Published: 19 March 1999
PDF: 6 pages
Proc. SPIE 3630, Silicon-based Optoelectronics, (19 March 1999); doi: 10.1117/12.342780
Show Author Affiliations
Wen-Gang Wu, Univ. of California/Los Angeles (China)
Jian-Lin Liu, Univ. of California/Los Angeles (United States)
Gaolong Jin, Univ. of California/Los Angeles (United States)
Kang Lung Wang, Univ. of California/Los Angeles (United States)

Published in SPIE Proceedings Vol. 3630:
Silicon-based Optoelectronics
Derek C. Houghton; Eugene A. Fitzgerald, Editor(s)

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