Share Email Print
cover

Proceedings Paper

Monolithic SiGe/Si quantum well sensor circuit for the 8- to 12-um band
Author(s): David J. Robbins; John L. Glasper; Carl J. Anthony; Michael J. Uren; Roger Timothy Carline; David C. Herbert; Weng Y. Leong
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Long wavelength Si0.8Ge0.2/Si quantum well infrared photodetectors (QWIPs) grown by low pressure CVD have been fabricated both as discrete devices and integrated onto a CMOS readout circuit to produce a monolithic Si-based sensor circuit for detection of thermal radiation. The peak photoresponse of the detectors near 8 micrometer is dominated by transitions to unbound final states associated with the spin-orbit split-off valence band. These optical transitions are allowed by symmetry reduction in the quantum wells, which is also evident in the electrical properties. The electrical noise is nearly ideal for temperatures up to 70 K, with no excess low frequency flicker noise. The capture probability for photoexcited holes into the quantum wells is approximately 0.55 at low temperature. The external 500 K black body responsivities for both the discrete and the monolithically integrated QWIPs are approximately 1.8 mA W-1 at 1 V bias, corresponding to a single pass of the radiation through the detectors. There is no degradation of either the CMOS transistors or the QWIPS caused by the integration process to create the monolithic sensor circuit.

Paper Details

Date Published: 19 March 1999
PDF: 8 pages
Proc. SPIE 3630, Silicon-based Optoelectronics, (19 March 1999); doi: 10.1117/12.342779
Show Author Affiliations
David J. Robbins, Defence Evaluation and Research Agency Malvern (United Kingdom)
John L. Glasper, Defence Evaluation and Research Agency Malvern (United Kingdom)
Carl J. Anthony, Defence Evaluation and Research Agency Malvern (United Kingdom)
Michael J. Uren, Defence Evaluation and Research Agency Malvern (United Kingdom)
Roger Timothy Carline, Defence Evaluation and Research Agency Malvern (United Kingdom)
David C. Herbert, Defence Evaluation and Research Agency Malvern (United Kingdom)
Weng Y. Leong, Defence Evaluation and Research Agency Malvern (United Kingdom)


Published in SPIE Proceedings Vol. 3630:
Silicon-based Optoelectronics
Derek C. Houghton; Eugene A. Fitzgerald, Editor(s)

© SPIE. Terms of Use
Back to Top