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Proceedings Paper

Photoprocesses on the surface of nanoporous semiconductors
Author(s): Yuri A. Bykovsky; A. A. Chistyakov; G. E. Kotkovskii; M. B. Kuznetsov; V. A. Karavanskii
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Paper Abstract

Photoinduced processes on surfaces of nanoporous semiconductors, such as Si and GaAs, are experimentally investigated. It was shown the possibility of change and control of desorption states on porous surface and, consequently, luminescence properties under laser irradiation by IR and visible light.

Paper Details

Date Published: 15 March 1999
PDF: 8 pages
Proc. SPIE 3734, ICONO '98: Fundamental Aspects of Laser-Matter Interaction and New Nonlinear Optical Materials and Physics of Low-Dimensional Structures, (15 March 1999); doi: 10.1117/12.342369
Show Author Affiliations
Yuri A. Bykovsky, Moscow State Engineering Physics Institute (Russia)
A. A. Chistyakov, Moscow State Engineering Physics Institute (Russia)
G. E. Kotkovskii, Moscow State Engineering Physics Institute (Russia)
M. B. Kuznetsov, Moscow State Engineering Physics Institute (Russia)
V. A. Karavanskii, General Physics Institute (Russia)


Published in SPIE Proceedings Vol. 3734:
ICONO '98: Fundamental Aspects of Laser-Matter Interaction and New Nonlinear Optical Materials and Physics of Low-Dimensional Structures
Konstantin N. Drabovich; V. I. Emelyanova; Vladimir A. Makarov, Editor(s)

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