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Proceedings Paper

Theory of single-pulse laser amorphization of semiconductors
Author(s): Vladimir I. Emel'yanov; Ivan M. Panin
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Paper Abstract

The theory of amorphization under pulsed laser melting of surfaces of crystalline semiconductors, based on mechanism of point defect capture and formation of nanometer periodic defect-deformational structures, is developed. The critical defect concentration and critical solidification front velocity at exceeding of which amorphization occurs are determined. The hierarchy of structural transformations at surface after melt solidification observed with decrease of laser fluency is analytically described.

Paper Details

Date Published: 15 March 1999
PDF: 13 pages
Proc. SPIE 3734, ICONO '98: Fundamental Aspects of Laser-Matter Interaction and New Nonlinear Optical Materials and Physics of Low-Dimensional Structures, (15 March 1999); doi: 10.1117/12.342363
Show Author Affiliations
Vladimir I. Emel'yanov, M.V. Lomonosov Moscow State Univ. (Russia)
Ivan M. Panin, M.V. Lomonosov Moscow State Univ. (Russia)


Published in SPIE Proceedings Vol. 3734:
ICONO '98: Fundamental Aspects of Laser-Matter Interaction and New Nonlinear Optical Materials and Physics of Low-Dimensional Structures
Konstantin N. Drabovich; V. I. Emelyanova; Vladimir A. Makarov, Editor(s)

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