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Proceedings Paper

Transient phenomena in a thin film of a three-level atom model with ultrashort pulses
Author(s): S. L. Gaivan; P. I. Khadzhi
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Paper Abstract

A theoretical investigation is reported of the coherent nonlinear response of excitons and biexcitons in a thin semiconductor film subjected to resonant laser radiation. It is shown that saturation of an exciton transition results in an abrupt qualitative change in the nature of film transition from the regime of total reflection of the incident pulse at low pump amplitudes to oscillatory reflection at high amplitudes. A new area theorem is derived for ultrashort pulses: it establishes a correspondence between the areas of the incident, transmitted and reflected pulses. Anomalous transmission and reflection is predicted for large values of the nonlinear parameter. The equations of the state, describing bistable behavior of the amplitudes of the fields of the transmitted and reflected radiation, are derived for quasi-cw operation.

Paper Details

Date Published: 15 March 1999
PDF: 9 pages
Proc. SPIE 3734, ICONO '98: Fundamental Aspects of Laser-Matter Interaction and New Nonlinear Optical Materials and Physics of Low-Dimensional Structures, (15 March 1999); doi: 10.1117/12.342339
Show Author Affiliations
S. L. Gaivan, Institute of Applied Physics (Moldova)
P. I. Khadzhi, Institute of Applied Physics (Moldova)


Published in SPIE Proceedings Vol. 3734:
ICONO '98: Fundamental Aspects of Laser-Matter Interaction and New Nonlinear Optical Materials and Physics of Low-Dimensional Structures
Konstantin N. Drabovich; V. I. Emelyanova; Vladimir A. Makarov, Editor(s)

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