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Proceedings Paper

Overheated femtosecond plasma in highly porous silicon
Author(s): M. S. Dzhidzhoev; S. A. Gavrilov; Vyacheslav M. Gordienko; P. M. Mikheev; Andrey B. Savel'ev; A. A. Shashkov; T. M. Vlasov; R. V. Volkov
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Paper Abstract

We present results on plasma formation in porous silicon (cluster like solid with mean cluster size of 3 nm, mean density 0.1 - 0.2 of crystalline silicon) by femtosecond laser pulses at intensity above 10 TW/cm2. We deduced hot electron temperature as high as 8 keV and fast ions of at least 2 MeV energy.

Paper Details

Date Published: 5 March 1999
PDF: 3 pages
Proc. SPIE 3735, ICONO '98: Ultrafast Phenomena and Interaction of Superstrong Laser Fields with Matter: Nonlinear Optics and High-Field Physics, (5 March 1999); doi: 10.1117/12.341473
Show Author Affiliations
M. S. Dzhidzhoev, M.V. Lomonosov Moscow State Univ. (Russia)
S. A. Gavrilov, Moscow Institute of Electronic Techniques (Russia)
Vyacheslav M. Gordienko, M.V. Lomonosov Moscow State Univ. (Russia)
P. M. Mikheev, M.V. Lomonosov Moscow State Univ. (Russia)
Andrey B. Savel'ev, M.V. Lomonosov Moscow State Univ. (Russia)
A. A. Shashkov, M.V. Lomonosov Moscow State Univ. (Russia)
T. M. Vlasov, M.V. Lomonosov Moscow State Univ. (Russia)
R. V. Volkov, M.V. Lomonosov Moscow State Univ. (Russia)


Published in SPIE Proceedings Vol. 3735:
ICONO '98: Ultrafast Phenomena and Interaction of Superstrong Laser Fields with Matter: Nonlinear Optics and High-Field Physics
Mikhail V. Fedorov; Vyacheslav M. Gordienko; Vladimir V. Shuvalov; Vladimir D. Taranukhin, Editor(s)

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