Share Email Print
cover

Proceedings Paper

Integrated multicolor detector utilizing 1D photonic bandgap filter with wedge-shaped defect
Author(s): Zoran S. Jaksic; Radomir Petrovic; Danijela Randjelovic; Tatjana Dankovic; Zoran G. Djuric; Wolfgang Ehrfeld; Andreas Schmidt; Karl Heinz Hecker
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We propose a single-chip multicolor photodetector for micrometers range based on a linear IR semiconductor detector array with an integrated 1D photonic bandgap (PBG) filter. A wedge- shaped defect slab is introduced into the filer instead of one of the layers. The bandgap of the photonic crystal coincides with the spectral sensitivity range of the photodetector array, while the built-in defect gives a transmission peak within the same range. The defect thickness varies along the array length and thus shifts the transmission peak wavelength. The optimized photonic bandgap filter including defect is designed using the transfer matrix method. The peak frequency is tuned by choosing the geometrical parameters of the wedge-shaped defect. In our experiments, thin alternating Si and SiO2 films are sputtered onto the array surface, thus forming a 1D PBG structure. The defect is fabricated by gradually changing the middle Si layer thickness over the width of the array. Its wedge-forming is performed by micromachining or, alternatively, by in-situ oblique deposition within the sputtering system and, possibly, subsequent chemomechanical polishing. The characteristics of the finished PBG structure are measured using an IR spectrophotometer. An increase of the number of PBG layers improves the confinement of transmission peaks and thus decreases the crosstalk between the array elements. Although our multicolor detector is designed for the (3-5) micrometers atmospheric window, it can be straightforward redesigned for any other optical range.

Paper Details

Date Published: 10 March 1999
PDF: 9 pages
Proc. SPIE 3680, Design, Test, and Microfabrication of MEMS and MOEMS, (10 March 1999); doi: 10.1117/12.341252
Show Author Affiliations
Zoran S. Jaksic, Institute of Microelectronic Technologies and Single Crystals (Serbia)
Radomir Petrovic, Institute of Microelectronic Technologies and Single Crystals (Serbia)
Danijela Randjelovic, Institute of Microelectronic Technologies and Single Crystals (Serbia)
Tatjana Dankovic, Institute of Microelectronic Technologies and Single Crystals (Serbia)
Zoran G. Djuric, Institute of Microelectronic Technologies and Single Crystals (Serbia)
Wolfgang Ehrfeld, Institut fuer Mikrotechnik Mainz GmbH (Germany)
Andreas Schmidt, Institut fuer Mikrotechnik Mainz GmbH (Germany)
Karl Heinz Hecker, Institut fuer Mikrotechnik Mainz GmbH (United States)


Published in SPIE Proceedings Vol. 3680:
Design, Test, and Microfabrication of MEMS and MOEMS
Bernard Courtois; Wolfgang Ehrfeld; Selden B. Crary; Wolfgang Ehrfeld; Hiroyuki Fujita; Jean Michel Karam; Karen W. Markus, Editor(s)

© SPIE. Terms of Use
Back to Top