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Proceedings Paper

Design, test, and simulation of self-assembled micromachined rf inductors
Author(s): Peter L. Gammel; Bradley P. Barber; Victor M. Lubecke; Nathan Belk; M. R. Frei
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Paper Abstract

Inductors are essential for fully integrated, complex RF circuits such as single chip radios. Both high Q, Q > 15, and high precision, +/- 2 percent, inductors are needed to meet phase noise specifications for on-chip VCO's and for reactive impedance matching to improve power transfer and linearity. We describe the design, test and simulation of self-assembled, micromachined inductors lifted away from the substrate by tensile stress in the metallization. The air gap reduces the capacitive coupling to the substrate, increasing both the Q and self-resonant frequency. For 2nH inductors we have measured Q-14 at 2GHz, with process variation < 2 percent. Increased temperature and current strongly increase the loss, but do not effect the inductance. The inductors are also relatively insensitive to mechanical excitation, with forces approximately 30g's required to significantly modulate the inductor loss under resonant excitation. Extensive EM simulations of this design methodology suggest that we should be able to reach Q > 25 at 2GHz and maintain 10GHz. We also compare these results with state of the art fully integrated Si RFIC planar inductors.

Paper Details

Date Published: 10 March 1999
PDF: 10 pages
Proc. SPIE 3680, Design, Test, and Microfabrication of MEMS and MOEMS, (10 March 1999); doi: 10.1117/12.341249
Show Author Affiliations
Peter L. Gammel, Lucent Technologies/Bell Labs. (United States)
Bradley P. Barber, Lucent Technologies/Bell Labs. (United States)
Victor M. Lubecke, Lucent Technologies/Bell Labs. (United States)
Nathan Belk, Lucent Technologies/Bell Labs. (United States)
M. R. Frei, Lucent Technologies/Bell Labs. (United States)


Published in SPIE Proceedings Vol. 3680:
Design, Test, and Microfabrication of MEMS and MOEMS
Bernard Courtois; Wolfgang Ehrfeld; Selden B. Crary; Wolfgang Ehrfeld; Hiroyuki Fujita; Jean Michel Karam; Karen W. Markus, Editor(s)

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