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Proceedings Paper

III-V semiconductor-based MOEMS
Author(s): Pierre Viktorovitch
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Paper Abstract

The state of the art of III-V semiconductor based Micro- Opto-Mechanical Systems (MOEMS) is presented with a special emphasis on InP and related materials. It is shown that the MOEMS technology can enhance considerably the capabilities of optical micro-cavities, which are considered as a major component for optical signal processing and light generation. Illustrations of the potential of III-V MOEMS are given in the fields of Optical Telecommunications and Near-IR photodetection. Future prospects implying the marriage of MOEMS approach with Photonic Band Gap concepts are proposed.

Paper Details

Date Published: 10 March 1999
PDF: 11 pages
Proc. SPIE 3680, Design, Test, and Microfabrication of MEMS and MOEMS, (10 March 1999); doi: 10.1117/12.341197
Show Author Affiliations
Pierre Viktorovitch, LEOM/Ecole Centrale de Lyon (France)


Published in SPIE Proceedings Vol. 3680:
Design, Test, and Microfabrication of MEMS and MOEMS
Bernard Courtois; Wolfgang Ehrfeld; Selden B. Crary; Wolfgang Ehrfeld; Hiroyuki Fujita; Jean Michel Karam; Karen W. Markus, Editor(s)

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