Share Email Print

Proceedings Paper

III-V semiconductor-based MOEMS
Author(s): Pierre Viktorovitch
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The state of the art of III-V semiconductor based Micro- Opto-Mechanical Systems (MOEMS) is presented with a special emphasis on InP and related materials. It is shown that the MOEMS technology can enhance considerably the capabilities of optical micro-cavities, which are considered as a major component for optical signal processing and light generation. Illustrations of the potential of III-V MOEMS are given in the fields of Optical Telecommunications and Near-IR photodetection. Future prospects implying the marriage of MOEMS approach with Photonic Band Gap concepts are proposed.

Paper Details

Date Published: 10 March 1999
PDF: 11 pages
Proc. SPIE 3680, Design, Test, and Microfabrication of MEMS and MOEMS, (10 March 1999); doi: 10.1117/12.341197
Show Author Affiliations
Pierre Viktorovitch, LEOM/Ecole Centrale de Lyon (France)

Published in SPIE Proceedings Vol. 3680:
Design, Test, and Microfabrication of MEMS and MOEMS
Bernard Courtois; Wolfgang Ehrfeld; Selden B. Crary; Wolfgang Ehrfeld; Hiroyuki Fujita; Jean Michel Karam; Karen W. Markus, Editor(s)

© SPIE. Terms of Use
Back to Top