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Proceedings Paper

Electrochemical etching of silicon in aqueous solutions
Author(s): David Starosvetsky; Mark Kovler; Joseph Yahalom
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Paper Abstract

The increase in the etching rate of both n- and p-type silicon was obtained under cathodic biasing in alkaline solutions. In the case of n-silicon the acceleration of the etching rate in dark was found to be markedly enhanced by illumination. The high rate of etching of p-silicon at cathodically applied voltage was obtained only with illumination. When the process was carried out at potentials more negative than -10 V it provoked electropolishing of the etched surface. Shifting the potential in the cathodic direction increase the etch-rate and enhances the effect of polishing. The etch-rate increased by more than two orders of magnitude over the potential range from -10 to -50 V, and reached the values above 200 micron/hour.

Paper Details

Date Published: 10 March 1999
PDF: 8 pages
Proc. SPIE 3680, Design, Test, and Microfabrication of MEMS and MOEMS, (10 March 1999); doi: 10.1117/12.341179
Show Author Affiliations
David Starosvetsky, Technion-Israel Institute of Technology (Israel)
Mark Kovler, Technion-Israel Institute of Technology (Israel)
Joseph Yahalom, Technion-Israel Institute of Technology (Israel)


Published in SPIE Proceedings Vol. 3680:
Design, Test, and Microfabrication of MEMS and MOEMS
Bernard Courtois; Wolfgang Ehrfeld; Selden B. Crary; Wolfgang Ehrfeld; Hiroyuki Fujita; Jean Michel Karam; Karen W. Markus, Editor(s)

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