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Proceedings Paper

Silicon hillocks elimination using a complexant redox alkaline system
Author(s): Carmen Moldovan; Rodica Iosub; Dan C. Dascalu; Gheorghe Nechifor; Cornelia-Carmen Danila
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Paper Abstract

This paper present the results from the investigation of the chemical anisotropic etching of single-crystal silicon in the following solutions: KOH, K3[Fe(CN)6] 0.1M, K4[Fe(CH)6] 3H2O 0.1M, KNO3 0.1M and/or complexant added. The complexants added in KOH solution were: Calix(4)arenes, Phenols and Ether Dibenzo 18 Crown 6. The result using also NaOH or LiOH H2O and complexants are presented. The reaction mechanism and the hillocks formation and elimination are analyzed. The results allow us to use the redox system and/or the organic complexants, to monitor the etching process, to obtain a smooth silicon surface, almost free of hillocks, to utilize the usual mask material resistant at the new etchants.

Paper Details

Date Published: 10 March 1999
PDF: 12 pages
Proc. SPIE 3680, Design, Test, and Microfabrication of MEMS and MOEMS, (10 March 1999); doi: 10.1117/12.341176
Show Author Affiliations
Carmen Moldovan, National Institute for Research and Development in Microtechnologies (Romania)
Rodica Iosub, National Institute for Research and Development in Microtechnologies (Romania)
Dan C. Dascalu, National Institute for Research and Development in Microtechnologies (Romania)
Gheorghe Nechifor, Politechnica Univ. of Bucharest (Romania)
Cornelia-Carmen Danila, National Institute for Research and Development in Microtechnologies (Romania)


Published in SPIE Proceedings Vol. 3680:
Design, Test, and Microfabrication of MEMS and MOEMS

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