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Proceedings Paper

Characteristics of residual products in HF gas-phase etching of sacrificial oxides for silicon micromachining
Author(s): Won-Ick Jang; Chang-Auck Choi; Chang Seung Lee; Yoonshik Hong; Jong-Hyun Lee
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Paper Abstract

We employed a newly developed HF gas-phase etching (GPE) process for the removal of sacrificial oxides. The structural layers are P-doped multi-stacked polysilicon and silicon epi-layer of SOI substrates and sacrificial layers are TEOS, LTO, PSG, and thermal oxides on silicon nitride or polysilicon substrates. The characteristics of residual products on polysilicon or silicon nitride were scrutinized by using SEM and AES. After GPE of TEOS, LTO, and PSG on the silicon nitride substrate, the polysilicon microstructures are stuck to the underlying substrate because neither the SiOxNy layers nor the H3PO4(H2O) layer vaporize. We found that the etching of TEOS, LTO, and thermal oxide on a polysilicon substrate shows no residual product and no stiction.

Paper Details

Date Published: 10 March 1999
PDF: 8 pages
Proc. SPIE 3680, Design, Test, and Microfabrication of MEMS and MOEMS, (10 March 1999); doi: 10.1117/12.341163
Show Author Affiliations
Won-Ick Jang, Electronics and Telecommunications Research Institute (South Korea)
Chang-Auck Choi, Electronics and Telecommunications Research Institute (South Korea)
Chang Seung Lee, Electronics and Telecommunications Research Institute (South Korea)
Yoonshik Hong, Electronics and Telecommunications Research Institute (South Korea)
Jong-Hyun Lee, Electronics and Telecommunications Research Institute (South Korea)


Published in SPIE Proceedings Vol. 3680:
Design, Test, and Microfabrication of MEMS and MOEMS
Bernard Courtois; Wolfgang Ehrfeld; Selden B. Crary; Wolfgang Ehrfeld; Hiroyuki Fujita; Jean Michel Karam; Karen W. Markus, Editor(s)

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