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Proceedings Paper

Variation of the deformation response of a silicon surface due to surface layer saturation with defects under pulsed and pulse-periodic laser radiation
Author(s): Alexander F. Banishev; Vladimir S. Golubev; Alexei Yu. Kremnev
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Paper Abstract

The method of probe beam scattering was used to study the peculiarities of monocrystalline Si surface destruction under pulsed laser irradiation. The shape of scattering signal showed that in the exposure region a surface layer rich in defects is formed. A study has been made on its influence on dynamics of sample surface deformation.

Paper Details

Date Published: 20 January 1999
PDF: 5 pages
Proc. SPIE 3688, 6th International Conference on Industrial Lasers and Laser Applications '98, (20 January 1999); doi: 10.1117/12.337540
Show Author Affiliations
Alexander F. Banishev, NICTL Laser Research Ctr. (Russia)
Vladimir S. Golubev, NICTL Laser Research Ctr. (Russia)
Alexei Yu. Kremnev, NICTL Laser Research Ctr. (Russia)


Published in SPIE Proceedings Vol. 3688:
6th International Conference on Industrial Lasers and Laser Applications '98
Vladislav Ya. Panchenko; Vladimir S. Golubev, Editor(s)

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