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Proceedings Paper

High-speed monitoring and control of CVD metal-organic precursors using FT-IR spectroscopy
Author(s): David F. Marran; Chad M. Nelson; Louis J. Guido; Brendan Gaffey
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Paper Abstract

MOCVD has emerged as an important technique for the manufacturing of advanced semiconducting and optoelectronic thin film materials with multilayered and graded compositional profiles. The commercialization of these materials will be limited without real-time monitoring and closed loop control of the growth chemistry. This limitation has the potential to be eliminated using a novel FT-IR with a novel micro-multipass gas cell. The cell, based on proprietary aberration corrected mirrors, is characterized by a 1-meter optical pathlength, a 2.5 cm base path, a d an internal volume of 2.8 cm3. The cell is designed to operate in cross-flow such that the gas in the cell is representative of the sample stream with < 0.5 second time delay following a step change in concentration. Preliminary measurements for trimethylgallium, trimethylindium, and bis(cyclopentadienyl)magnesium indicate detection limits of 1.3 Pa, 1.6 Pa, and 0.1 Pa, respectively, using the low volume cell and a one second scan time.

Paper Details

Date Published: 22 January 1999
PDF: 8 pages
Proc. SPIE 3535, Advanced Sensors and Monitors for Process Industries and the Environment, (22 January 1999); doi: 10.1117/12.337468
Show Author Affiliations
David F. Marran, Advanced Fuel Research, Inc. (United States)
Chad M. Nelson, Advanced Fuel Research, Inc. (United States)
Louis J. Guido, Yale Univ. (United States)
Brendan Gaffey, Yale Univ. (United States)

Published in SPIE Proceedings Vol. 3535:
Advanced Sensors and Monitors for Process Industries and the Environment
Wim A. de Groot, Editor(s)

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