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Proceedings Paper

Coefficient of electron diffusion in a single-crystal thin film
Author(s): Dragana B. Mijatovic; Ljiljana D. Maskovic; Milan Pantic
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Paper Abstract

We have studied electron diffusion in thin single-crystal films using the Kubo formalism, at the Debye and room temperatures. We show that the diffusion coefficient in very thin films is half of the one found in crystals. This result is in good agreement with the experimental results particularly for aluminum. In our numerical calculations, the parameters of metal structure are fitted to obtain the formula for the diffusion coefficient. More specifically, these calculations show that increase in the crystal thickness causes increase of the coefficient of electron diffusion, and for the thickness of few hundred atomic monolayers reaches the value in bulk crystals. For example, the diffusion coefficient of a three-layer-thick film is 0.706(DOT)10-7 cm2/s, for five-layer film it amounts to 0.872(DOT)10-7 cm2/s, while for a thousand-layer film it is 1.253(DOT)10-7 cm2/s. The last value is rather close to the one we found for the bulk structure, 1.255(DOT)10-7 cm2/s.

Paper Details

Date Published: 22 December 1998
PDF: 6 pages
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, (22 December 1998); doi: 10.1117/12.335907
Show Author Affiliations
Dragana B. Mijatovic, Institute of Physics (Serbia)
Ljiljana D. Maskovic, Institute of Physics (FR Yugoslavia)
Milan Pantic, Institute of Nuclear Sciences Vinca (Serbia)

Published in SPIE Proceedings Vol. 3481:
Superconducting and Related Oxides: Physics and Nanoengineering III
Davor Pavuna; Ivan Bozovic, Editor(s)

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