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Proceedings Paper

Critical temperature enhancement by means of substrate-induced pressure
Author(s): Joel Perret; J. Fompeyrine; Jeongwoo Seo; E. Machler; Oystein Fischer; Piero Martinoli; Jean-Pierre Locquet
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Paper Abstract

In the field of high-temperature superconductivity there has been no increase in the critical temperature Tc of bulk compounds since 1993. However, an analysis of the uniaxial strain or pressure derivatives of Tc in the cuprate superconductors allows us to predict that under a compressive epitaxial strain, a large increase of Tc should be possible. We demonstrate the experimental feasibility of this approach for La2-xSrxCuO4+/- (delta ) ('214') thin films deposited on (001)-oriented SrLaAlO4 substrates for different Sr content (0.045 less than or equal to x less than or equal to 0.11). Under epitaxial strain, a large jump of the critical temperature Tc is observed, as well as a drastic change in the resistive behavior from insulating to metallic at low temperatures.

Paper Details

Date Published: 22 December 1998
PDF: 7 pages
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, (22 December 1998); doi: 10.1117/12.335902
Show Author Affiliations
Joel Perret, Univ. de Neuchatel and IBM Zurich Research Lab. (Switzerland)
J. Fompeyrine, IBM Zurich Research Lab. (Switzerland)
Jeongwoo Seo, Univ. de Neuchatel and IBM Zurich Research Lab. (South Korea)
E. Machler, IBM Zurich Research Lab. (Switzerland)
Oystein Fischer, Univ. de Geneve (Switzerland)
Piero Martinoli, Univ. de Neuchatel (Switzerland)
Jean-Pierre Locquet, IBM Zurich Research Lab. (Switzerland)


Published in SPIE Proceedings Vol. 3481:
Superconducting and Related Oxides: Physics and Nanoengineering III
Davor Pavuna; Ivan Bozovic, Editor(s)

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