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Proceedings Paper

Microstructural investigation of La1.9Sr0.1CuO4 thin films grown by MBE
Author(s): Jeongwoo Seo; Joel Perret; J. Fompeyrine; Gustaaf Van Tendeloo; Jean-Pierre Locquet
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Paper Abstract

The microstructure of La1.9Sr0.1CuO4 thin films grown by molecular beam epitaxy on SrLaAlO4 and SrTiO3 is investigated by transmission electron microscopy. Using SrLaAlO4 as substrate material, compressive strain is induced, which leads to a drastic increase of Tc. In contrast, SrTiO3 yields a tensile strain and a decrease of Tc. The film on SrLaAlO4 has a low defect density. Only misfit dislocations with an average spacing of 200 nm are found, which are more or less irregularly distributed. For SrTiO3, a periodic array of misfit dislocations is present with an average distance of 16 nm. At the interface, as derived from the comparison with simulated images, (LaSr)2CuAlO6-x and (LaSr)TiO3-x are formed on SrLaAlO4 and SrTiO3, respectively. These intermediate layers are found to increase the corresponding compressive and tensile strain further. The lattice deformation is determined based on lattice-image analysis. Here, the distance of CuO2 planes can be measured locally. It turns out that applying a compressive or tensile strain increases or decreases the distance between CuO2 planes. Accordingly, direct evidence is presented that a decoupling of CuO2 planes leads to an increase of Tc, which is in contradiction to recent theoretical predictions.

Paper Details

Date Published: 22 December 1998
PDF: 10 pages
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, (22 December 1998); doi: 10.1117/12.335901
Show Author Affiliations
Jeongwoo Seo, Univ. de Neuchatel and IBM Zurich Research Lab. (South Korea)
Joel Perret, Univ. de Neuchatel and IBM Zurich Research Lab. (Switzerland)
J. Fompeyrine, IBM Zurich Research Lab. (Switzerland)
Gustaaf Van Tendeloo, Univ. of Antwerp (Belgium)
Jean-Pierre Locquet, IBM Zurich Research Lab. (Switzerland)


Published in SPIE Proceedings Vol. 3481:
Superconducting and Related Oxides: Physics and Nanoengineering III
Davor Pavuna; Ivan Bozovic, Editor(s)

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