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Proceedings Paper

Josephson junction fabricated by decanano technology using a focused ion beam
Author(s): Youichi Enomoto; Shinichi Morohashi; Naoki Yutani; Katsu Ohnishi; Jianguo Wen
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Paper Abstract

High-Tc Josephson junctions have been fabricated by a focused Ga-ion beam (FIB) with a full width of half maximum of 10 nm. Using two functions of etching and deposition, two types of the junction structures have been made on MgO and SrTiO3 substrates. The first one is a grain boundary junction formed on the narrow modified area which is ion-irradiated on the substrate prior to film deposition. For this fabrication process, RSJ-type I-V characteristics are observed only on the MgO substrate. The Ic spread of working 30 junctions, (sigma) , is plus or minus 59% on the substrate of 1 cm2. The second one is a proximity-effect junction with Au barrier layer. The tunneling area has been formed by etching and deposition technique of high-resolution FIB after film deposition. This junction also shows RSJ-type properties. The first type junctions are applied for some integrated circuits, using advantage of freedom of choice in the position of each junction with the high accuracy of the ion-beam control.

Paper Details

Date Published: 22 December 1998
PDF: 12 pages
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, (22 December 1998); doi: 10.1117/12.335894
Show Author Affiliations
Youichi Enomoto, International Superconductivity Technology Ctr. (Japan)
Shinichi Morohashi, International Superconductivity Technology Ctr. (Japan)
Naoki Yutani, International Superconductivity Technology Ctr. (Japan)
Katsu Ohnishi, International Superconductivity Technology Ctr. (Japan)
Jianguo Wen, International Superconductivity Technology Ctr. (China)


Published in SPIE Proceedings Vol. 3481:
Superconducting and Related Oxides: Physics and Nanoengineering III
Davor Pavuna; Ivan Bozovic, Editor(s)

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