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Proceedings Paper

Step-flow growth of perovskite PbTiO3 thin films epitaxially grown on a miscut SrTiO3 substrate
Author(s): Kiyotaka Wasa; Yoko Haneda; Toshifumi Sato; Hideaki Adachi; Isaku Kanno; Darrell G. Schlom; Susan Trolier-McKinstry; Qing Gang; Chang-Beom Eom
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Paper Abstract

Continuous single crystal (001)PbTiO3 thin films under a step-flow growth mode were epitaxially grown on the miscut (001)SrTiO3 substrate with miscut angle of 1.7 degrees. A planar magnetron sputtering system was used for the epitaxial growth. The film thickness was ranged from 5 to 250 nm. The surface of the sputtered PbTiO3 thin films comprised periodic striped patterns with step lines and atomically flat terraces. The typical step height and terrace width were 3 nm and 200 nm, respectively. The partial oxygen pressure during sputtering deposition affected the stability of the step-flow growth mode. Lower partial oxygen pressure stabilized the step-flow growth mode resulting in a layer growth. The PT thin films include the stress due to the tetragonal lattice deformation.

Paper Details

Date Published: 22 December 1998
PDF: 8 pages
Proc. SPIE 3481, Superconducting and Related Oxides: Physics and Nanoengineering III, (22 December 1998); doi: 10.1117/12.335874
Show Author Affiliations
Kiyotaka Wasa, Yokohama City Univ. (Japan)
Yoko Haneda, Research Institute of Innovative Technology for the Earth (Japan)
Toshifumi Sato, Matsushita Electric Industrial Co., Ltd. (Japan)
Hideaki Adachi, Matsushita Electric Industrial Co., Ltd. (Japan)
Isaku Kanno, Matsushita Electric Industrial Co., Ltd. (Japan)
Darrell G. Schlom, The Pennsylvania State Univ. (United States)
Susan Trolier-McKinstry, The Pennsylvania State Univ. (United States)
Qing Gang, Duke Univ. (United States)
Chang-Beom Eom, Duke Univ. (United States)


Published in SPIE Proceedings Vol. 3481:
Superconducting and Related Oxides: Physics and Nanoengineering III
Davor Pavuna; Ivan Bozovic, Editor(s)

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