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Proceedings Paper

New method for simulation of nonlinear semiconductor microcavities
Author(s): Sergey V. Fedorov; M. A. Kalitieevsky
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Paper Abstract

It has been designed and applied the method of transfer matrix for layered structures with second order nonlinearity, as new technique to simulate spectral characteristics of semiconductor microcavities. The nonlinearity of single layer is simulated by transfer matrix with 4 X 4 dimensions. Light intensity distributions and spectral dependencies for generator of second harmonic have been calculated. It has been shown that the most effective direction of second harmonic wave is not coincide with direction of incident wave. It is demonstrated the university of suggested algorithm and capability to extend it for other types of cavities and nonlinearities.

Paper Details

Date Published: 6 January 1999
PDF: 10 pages
Proc. SPIE 3685, Laser Optics '98: Fundamental Problems of Laser Optics, (6 January 1999); doi: 10.1117/12.335828
Show Author Affiliations
Sergey V. Fedorov, S.I. Vavilov State Optical Institute (Russia)
M. A. Kalitieevsky, A.F. Ioffe Physical-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 3685:
Laser Optics '98: Fundamental Problems of Laser Optics
Nikolay N. Rosanov, Editor(s)

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