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Proceedings Paper

Optically detected carrier transport and capture in III/V semiconductor QW structures: high-resolution experiments, model calculations, and applications in fast 1.55-um lasers
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Paper Abstract

Optically detected carrier dynamics in III/V semiconductor quantum well (QW) heterostructures perpendicular to the interfaces is studied. Photoluminescence emission originating form different semiconductor layers are recorded time-resolved to probe the carrier dynamics between these layers. High spatial and temporal resolution is obtained experimentally, partly even in the nm and sub-ps ranges, respectively. Using several specially tailored semiconductor heterostructures enable the following individual dynamic effects to be studied and separated: transport in extended unquantized layers, capture into the QWs, relaxation in the QWs, tunneling between the QWs and thermal re-emission from the QWs. These basic physical effects have to be studied and understood to design and implement modern high-speed semiconductor laser devices. AlGaInAs and GaInAsP heterostructures are compared with respect to interwell transfer efficiencies and problems in technological implementation. This paper proceeds from basic research to applications in high-speed laser devices.

Paper Details

Date Published: 30 December 1998
PDF: 12 pages
Proc. SPIE 3683, Laser Optics '98: Superstrong Laser Fields and Applications, (30 December 1998); doi: 10.1117/12.334816
Show Author Affiliations
Hartmut Hillmer, Deutsche Telekom (Germany)
Saulius Marcinkevicius, Royal Institute of Technology (Sweden)


Published in SPIE Proceedings Vol. 3683:
Laser Optics '98: Superstrong Laser Fields and Applications
Alexander A. Andreev, Editor(s)

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