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Proceedings Paper

Inductively coupled plasma etch of DUV MoSi photomasks: a designed study of etch chemistries and process results
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Paper Abstract

The continuing requirements for high resolution, critical dimension control and linearity on photomasks necessitates highly anisotropic and uniform etching of the absorber material. Plasma etching has seen strong increases in popularity to improve the above mentioned requirements. Also recently popular is the inclusion of Embedded Phase Shift materials such as Molybdenum Silicide (MoSi); these materials allow for an engineered 180 degree shift in the phase of the exposure light at the wafer pane, affording enhanced contrast at the edges of a line or feature. This article studies the effect of ICP-based plasma conditions on the CD Uniformity, MoSi etch rate and post-etch Quartz roughness of 6 X 6 DUV MoSi Embedded Phase Shift mask structures through use of carefully Designed Experiments. This Design of Experiment (DOE) makes it possible to screen plasma chemistry, optimize resultant plasma parameters and present an overlayed Simultaneous Solution which is used as a centerpoint for Device Plate etch tuning. The high plasma density, independent ion energy control and low pressure operation of Inductively Coupled Plasmas make this technology well suited to minimizing undercut of the MoSi and affords a vehicle for the realization of a zero-basis etch process.

Paper Details

Date Published: 18 December 1998
PDF: 10 pages
Proc. SPIE 3546, 18th Annual BACUS Symposium on Photomask Technology and Management, (18 December 1998); doi: 10.1117/12.332879
Show Author Affiliations
Chris Constantine, Plasma-Therm, Inc. (United States)
David J. Johnson, Plasma-Therm, Inc. (United States)
Russell J. Westerman, Plasma-Therm, Inc. (United States)
Andrew C. Hourd, Compugraphics International Ltd. (United Kingdom)

Published in SPIE Proceedings Vol. 3546:
18th Annual BACUS Symposium on Photomask Technology and Management
Brian J. Grenon; Frank E. Abboud, Editor(s)

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